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| MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE RM1200HE-66S IF ................................................................ 1200A VRRM ...................................................... 3300V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 4-M8 NUTS 130 1.0 114 0.3 20.5 K K 90 1.0 74 0.3 20 40 0.5 A A 7 >PPS< (15) (15) 7 (15) 61.5 0.5 24 4-6.5 MOUNTING HOLES 39.5 K K 38 +1.0 0 29.7 LABEL 9.3 3 125.5 A A CIRCUIT DIAGRAM High Voltage Diode Module 85.5 May 2009 1 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) IF IFSM I 2t Viso Tj Top Tstg Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature Conditions Tj = 25 C Tj = 25 C Tj = 25 C TC = 25 C Tj = 25 C start, tw = 8.3 ms Half sign wave Tj = 25 C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. -- -- -- Ratings 3300 3300 2200 1200 9600 384 6000 -40 ~ +150 -40 ~ +125 -40 ~ +125 Unit V V V A A kA2s V C C C ELECTRICAL CHARACTERISTICS Symbol IRRM VFM trr Irr Qrr Erec Item Repetitive reverse current Forward voltage (Note 1) VRM = VRRM IF = 1200 A VR = 1650 V, IF = 1200 A di/dt = -3500 A/s Ls=100nH, Tj = 125 C Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Min -- -- -- -- -- -- -- -- Limits Typ -- -- 3.20 3.10 -- 1400 900 0.85 Max 5 30 3.77 -- 1.4 -- -- -- Unit mA V s A C J/P Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c) Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to case Case to Fin, grease = 1W/m*K D(c-f)=100m Min -- -- Limits Typ -- 15.0 Max 20.0 -- Unit K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms m Item Mounting torque Mass Conditions M8: Main terminals screw M6: Mounting screw -- Min 6.67 2.84 -- Limits Typ -- -- 0.66 Max 13.0 6.0 -- Unit N*m N*m kg PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) 2500 1.4 REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) VR = 1650V, Tj = 125C LS = 100nH 1.2 2000 REVERSE RECOVERY ENERGY Erec (J/p) Tj = 25C Tj = 125C 0 1 2 3 4 5 6 FORWARD CURRENT IF (A) 1.0 1500 0.8 1000 0.6 0.4 500 0.2 0 0 0 500 1000 1500 2000 2500 FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A) High Voltage Diode Module May 2009 3 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 104 3000 VR 2200V, di/dt 5300A/s Tj = 125C REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) 7 5 3 VR = 1650V, Tj = 125C LS = 100nH Irr REVERSE RECOVERY TIME trr (s) 3 2 2500 2 101 7 5 3 2 103 7 5 3 2 2000 1500 100 7 5 3 2 102 trr 7 5 3 2 7 103 7 104 1000 500 10-1 2 10 101 2 3 45 2 3 45 0 0 500 1000 1500 2000 2500 3000 3500 REVERSE VOLTAGE VR (V) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Rth(j-c) = 20K/kW 1.0 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 TIME (s) High Voltage Diode Module May 2009 4 |
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